EMB3 digital transistor (pnp+ pnp) features z two dta143t chips in a package z transistor elements are independen t, eliminating interference. z mounting cost and area can be cut in half. external circuit marking: b3 absolute maximum ratings(ta=25 ) parameter symbol limits unit collector-base voltage v (br)cbo -50 v collector-emitter voltage v (br)ceo -50 v emitter-base voltage v (br)ebo -5 v collector current i c -100 ma collector power dissipation p c 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions collector-base breakdown voltage v (br)cbo -50 v i c =-50 a collector-emitter breakdown voltage v (br)ceo -50 v i c =-1ma emitter-base breakdown voltage v (br)ebo -5 v i e =-50 a collector cut-off current i cbo -0.5 av cb =-50v emitter cut-off current i ebo -0.5 av eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 v i c =-5ma,i b =-2.5ma dc current transfer ratio h fe 100 600 v ce =-5v,i c =-1ma input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t 250 mhz v ce =10v ,i e =-5ma,f=100mhz sot-563 1 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
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